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TSUS4400
Vishay Telefunken
GaAs Infrared Emitting Diode in o 3 mm (T-1) Package
Description
TSUS4400 is an infrared emitting diode in standard GaAs on GaAs technology, molded in a clear, blue tinted plastic package. The device is spectrally matched to silicon photodetectors.
94 8488
Features
D D D D D D D D
Low forward voltage High radiant power and radiant intensity Suitable for DC and high pulse current operation Standard T-1(o 3 mm) package Angle of half intensity = 18 Peak wavelength lp = 950 nm High reliability Good spectral matching to Si photodetectors
Applications
Infrared remote control systems with small package and low cost requirements in combination with silicon photo detectors. Infrared source in reflective sensors, tape end detection.
Absolute Maximum Ratings
Tamb = 25_C Parameter Reverse Voltage Forward Current Peak Forward Current Surge Forward Current Power Dissipation Junction Temperature Operating Temperature Range Storage Temperature Range Soldering Temperature Thermal Resistance Junction/Ambient Test Conditions Symbol VR IF IFM IFSM PV Tj Tamb Tstg Tsd RthJA Value 5 100 200 2 170 100 -55...+100 -55...+100 260 450 Unit V mA mA A mW C C C C K/W
tp/T = 0.5, tp = 100 ms tp = 100 ms
t
x 5sec, 2 mm from case
Document Number 81054 Rev. 2, 20-May-99
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TSUS4400
Vishay Telefunken Basic Characteristics
Tamb = 25_C Parameter Forward Voltage g Temp. Coefficient of VF Reverse Current Breakdown Voltage Junction Capacitance Radiant Intensity y Radiant Power Temp. Coefficient of fe Angle of Half Intensity Peak Wavelength Spectral Bandwidth Temp. Coefficient of lp Rise Time Fall Time Test Conditions IF = 100 mA, tp = 20 ms IF = 1.5 A, tp = 100 ms IF = 100mA VR = 5 V IR = 100 mA VR = 0 V, f = 1 MHz, E = 0 IF = 100 mA, tp = 20 ms IF = 1.5 A, tp = 100 ms IF = 100 mA, tp = 20 ms IF = 20 mA IF = 100 mA IF = 100 mA IF = 100 mA IF = 100 mA IF = 1.5 A IF = 100 mA IF = 1.5 A Symbol VF VF TKVF IR V(BR) Cj Ie Ie TKfe Min Typ 1.3 2.2 -1.3 40 30 15 140 20 -0.8 18 950 50 0.2 800 400 800 400 Max 1.7 Unit V V mV/K
100 5 7
mA
fe
TKlp tr tr tf tf
lp Dl
V pF mW/sr mW/sr mW %/K deg nm nm nm/K ns ns ns ns
Typical Characteristics (Tamb = 25_C unless otherwise specified)
250 PV - Power Dissipation ( mW ) 200 IF - Forward Current ( mA ) 125 100
150 RthJA 100
75 RthJA 50
50 0 0 20 40 60 80 100
25 0 0 20 40 60 80 100
94 8029 e
Tamb - Ambient Temperature ( C )
94 7916 e
Tamb - Ambient Temperature ( C )
Figure 1. Power Dissipation vs. Ambient Temperature
Figure 2. Forward Current vs. Ambient Temperature
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Document Number 81054 Rev. 2, 20-May-99
TSUS4400
Vishay Telefunken
101 I e - Radiant Intensity ( mW/sr ) 102
94 7982 e
1000
I F - Forward Current ( A )
tp / T = 0.01, IFM = 2 A 0.02 100 0.05 0.1 0.2 0.5 10-1 10-2
100
10
1
0.1 10-1 100 101 tp - Pulse Duration ( ms ) 100 101 102 103 IF - Forward Current ( mA ) 104
94 7947 e
Figure 3. Pulse Forward Current vs. Pulse Duration
104 IF - Forward Current ( mA )
Figure 6. Radiant Intensity vs. Forward Current
1000
Fe - Radiant Power ( mW )
0 1 2 3 4
103 102 101 100 10-1
100
10
1
0.1 100
947980
94 7996 e
VF - Forward Voltage ( V )
101 102 103 IF - Forward Current ( mA )
104
Figure 4. Forward Current vs. Forward Voltage
1.2 V Frel - Relative Forward Voltage 1.1 I e rel ; Fe rel IF = 10 mA 1.0 0.9
Figure 7. Radiant Power vs. Forward Current
1.6
1.2 IF = 20 mA 0.8
0.4 0.8 0.7 0 20 40 60 80 100
94 7993 e
0 -10 0 10
50
100
140
94 7990 e
Tamb - Ambient Temperature ( C )
Tamb - Ambient Temperature ( C )
Figure 5. Relative Forward Voltage vs. Ambient Temperature
Figure 8. Rel. Radiant Intensity\Power vs. Ambient Temperature
Document Number 81054 Rev. 2, 20-May-99
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TSUS4400
Vishay Telefunken
0 1.25 1.0 I e rel - Relative Radiant Intensity 10 20 30
Fe rel - Relative Radiant Power
40 1.0 0.9 0.8 0.7 50 60 70 80
0.75 0.5
0.25 IF = 100 mA 0 900 950 1000
94 7994 e
l - Wavelength ( nm )
0.6
94 7983 e
0.4
0.2
0
0.2
0.4
0.6
Figure 9. Relative Radiant Power vs. Wavelength
Figure 10. Relative Radiant Intensity vs. Angular Displacement
Dimensions in mm
95 10914
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Document Number 81054 Rev. 2, 20-May-99
TSUS4400
Vishay Telefunken Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs ). The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA ) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423
Document Number 81054 Rev. 2, 20-May-99
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